Electronic structure of stacking faults in hexagonal graphite

Energetics and electronic structure of stacking faults in AlN, GaN, and InN

Basal-plane stacking faults in wurtzite AlN, GaN, and InN are studied using density-functionalpseudopotential calculations. The formation energies follow the trend exhibited for the zinc-blende/wurtzite energy differences in the bulk materials, namely, lowest energy for GaN and highest for AlN. Type-I stacking faults have the lowest energy, followed by type-II stacking faults, and finally extri...

Electronic structure of graphite oxide and thermally reduced graphite oxide

We present the electronic structure evolution from graphite oxide to thermally reduced graphite oxide. Most functional groups were removed by thermal reduction as indicated by high resolution X-ray photoelectron spectroscopy, and the electrical conductivity increased 6 orders compare with the precursor graphite oxide. X-ray absorption spectroscopy reveals that the thermally reduced graphite oxi...

Stacking faults and partial dislocations in graphene

We investigate two mechanisms of crystallographic slip in graphene, corresponding to glide and shuffle generalized stacking faults (GSF), and compute their -curves using Sandia National Laboratories Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS). We find evidence of metastable partial dislocations for the glide GSF only. The computed values of the stable and unstable stackin...

Shockley-Frank stacking faults in 6H-SiC

Stacking Faults in Co-Alloy Longitudinal Media

Stacking faults in CoCrTa/Cr, CoCrPt/NiAl, and CoCrPt/Cr/NiAl films have been studied by electron diffraction. Interfacial lattice match and epitaxial growth play important roles in reducing the stacking fault density. It is found that the bicrystal media has large stacking fault densities. In the unicrystal media case, when good epitaxy between magnetic layer and underlayer cannot be achieved,...